Technical data

Electrical Characteristics
MCIMX31C/MCIMX31LC Technical Data, Rev. 4.3
Freescale Semiconductor 11
NOTES
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal
resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of
other components on the board, and board thermal resistance.
2. Junction-to-Ambient Thermal Resistance determined per JEDEC JESD51-3 and JESD51-6.
Thermal test board meets JEDEC specification for this package.
3. Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board
meets JEDEC specification for the specified package.
4. Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The
cold plate temperature is used for the case temperature. Reported value includes the thermal
resistance of the interface layer.
5. Thermal characterization parameter indicating the temperature difference between the package
top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the
thermal characterization parameter is written as Psi-JT.
Junction to Ambient (@200 ft/min) Four layer board (2s2p) R
θJMA
25 °C/W 1, 2, 3
Junction to Board — R
θJB
19 °C/W 1, 3
Junction to Case (Top) — R
θJCtop
10 °C/W 1, 4
Junction to Package Top (natural convection) — Ψ
JT
2°C/W1, 5
Table 6. Thermal Resistance Data—19 × 19 mm Package (continued)
Rating Board Symbol Value Unit Notes