Specifications

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42 Intel

Atom™ processor CE4100 Ref# 420826

Platform Design Guide

Intel Confidential

The Intel

Atom™ processor CE4100 supports two DDR2/DDR3 SDRAM channels supporting

up to 1GB memory per channel. The design will support 512-Mb, 1-Gb or 2-Gb devices in a

single rank configuration. In support of the design guide, one channel may support one

device density and the other channel may support another configuration. The Intel

Atom™

processor CE4100 does not provide support for ECC memory and does not provide support

for DIMM, which means all memory devices are soldered down on the main board. The

Intel

Atom™ processor CE4100also does not provide support for registered memory

configurations. Both DDR2/DDR3 channels abide by the JEDEC standard.

This design guide is based upon the 1080 stack-up specification in Section 3.1. Only trace

idth, trace length and isolation is emphasized. Timing is not guaranteed if the

recommended stack-up requirements are not met. Customers should perform a detailed

timing analysis when deviating from the recommended stack-up. Spacing given throughout

the recommendations is edge to edge from any other signal.

5.1 Supported Configurations

The memory controller supports a total memory capacity up to 2 GB (across 2 channels).

For DDR2, the controller can support from 128 MB to 1 GB per channel.

Table 5-1. DDR2 DRAMComponent Organization

DRAM Capacity in 1

Channel

DRAM Component

Density

Component Width Numbers of

components (per

channel)

256 Mb x8 4

128 MB

512 Mb x16 2

512 Mb x8 4

256 MB

1 Gb x16 2

1 Gb x8 4

512 MB

2 Gb x16 2

1 GB 2 Gb x8 4

For DDR3, the controller can support from 128MB to 1 GB per channel

Table 5-2. DDR3 DRAMComponent Organization