Specifications

Samsung Electronics 4-11
Alignment and Adjustments
4-4 Fault Finding Using MULTI METER
Parts defects can be found for DIODE TRANSISTOR IC, using MULTI TEST including
Forward/Reverse direction Multi Test. Of course, in case resistance of several ohms and COIL are connect-
ed in parallel circuit, the lock out circuit parallel connected to part must be severed.
1.DIODE
2. TRANSISTOR
For NPN(KSC815-Y, 2SC2068, 2SC2331-Y)
For PNP(KSA539-Y)
+- +-
Forward Direction
Hundreds of ohms
Reverse Direction
Infinity
Between Anode and Cathode
C (COLLECTOR)
E
B(BASE)
BC
C (COLLECTOR)
E
B(BASE)
BC
E (EMITTER)
E (EMITTER)
Forward Direction
Hundreds of ohms
Hundreds of ohms
Infinity
Reverse Direction
Infinity
Infinity
Infinity
Between B and E
Between B and C
Between E and C
Forward Direction
Hundreds of ohms
Hundreds of ohms
Infinity
Reverse Direction
Infinity
Infinity
Infinity
Between B and E
Between B and C
Between E and C