Computer Accessories User Manual

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PRODUCT SELECTION GUIDE

LCD, Memory and Storage - 1H 2011

Summary of content (28 pages)

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Product Selection Guide LCD, Memory and Storage - 1H 2011
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Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks to powerful servers—and in a wide range of handheld devices such as smartphones and tablets. Samsung also delivers the industry’s widest line of storage products from the consumer to the enterprise level.
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DRAM Pages 4-12 • • • • DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM • Mobile DRAM • Graphics DDR SDRAM • DRAM Ordering Information FLASH Pages 13-15 samsung.com/semi/flash • • • • SLC Flash MLC Flash SD and microSD Cards moviNAND™ (eMMC) • Solid State Drive • SATA SSD • Flash Ordering Information HIGH-SPEED SRAM Pages 16-20 samsung.
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DDR3 SDRAM REGISTERED MODULES Density Voltage Organization Part Number 1GB 2GB 4GB 1.5V 1.5V 1.
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Density Voltage Organization 1GB 1.5V 128Mx72 2GB 4GB 8GB 16GB 8GB 16GB 2GB 4GB 8GB Notes: 1.5V 1.5V 1.5V 1.5V 1.35V 1.35V 1.35V 1.35V 1.35V 256Mx72 512Mx72 1Gx72 2Gx72 1Gx72 2Gx72 256Mx72 512Mx72 1Gx72 F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) samsung.
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DDR3 SDRAM UNBUFFERED MODULES Density Voltage 1GB 1.5V 2GB 1.5V 4GB 1.5V Organization 128Mx64 256Mx64 512Mx64 1024Mx64 8GB 1.
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Density Voltage Organization 1Gb 1.5V 256M x4 1Gb 1.5V 128M x8 1Gb 1.5V 128M x16 2Gb 1.5V 512M x4 2Gb 1.5V 256M x8 2Gb 1.5V 128Mx16 4Gb 1.5V 1024M x4 4Gb 1.5V 512M x8 1Gb 1.35V 256M x4 1Gb 1.35V 128M x8 2Gb 1.35V 512M x4 2Gb 1.35V 256M x8 4Gb 1.35V 1024M x4 4Gb 1.35V 512M x8 Notes: F7 = DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) Part Number # Pins-Package Compliance Speed (Mbps) Dimensions Production K4B1G0446F-HC(F8/H9/K0) 78 Ball -FBGA 1066/1333/1600 7.
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DDR2 SDRAM UNBUFFERED MODULES Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production 1GB 2GB 128Mx64 256Mx64 M378T2863FBS-C(E6/F7/E7) M378T5663FB3-C(E6/F7/E7) (128M x8)*8 (128M x8)*16 Lead free Lead free 667/800 667/800 1 2 Now Now Notes: E6 = PC2-5300 (DDR2-667 @ CL=5) E7 = PC2-6400 (DDR2-800 @ CL=5) F7 = PC2-6400 (DDR2-800 @ CL=6) Voltage = 1.
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Type MSDR Density Organization Part Number Package Power Production 16Gb 32Mx16 16Mx32 16Mx16 8Mx32 32Mx16 16Mx32 32Mx32 64Mx32 x32 (2CS, 2CKE) x32 (2CS, 2CKE) 1CH x32 1CH x32 2CH x32/ch 1CH x32 1CH x32 1CH x32 2CH x32/ch 2CH x32/ch 1CH x32 2CH x32/ch 2CH x32/ch 2CH x32/ch 2CH x32/ch K4M51163PI-BG(1) K4M51323PI-HG(1) K4X56163PN-FG(1) K4X56323PN-8G(1) K4X51163PI-FG(1) K4X51323PI-8G(1) K4X1G323PF-8G(1) K4X2G323PC-8G(1) K4X4G303PC-AG(1) K4X4G303PC-7G(1) K4P1G324EE-AG(1) K4P2G324EC-AG(1) K3PE3E300M-XG(
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COMPONENT DRAM ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (VDD, VDDQ) Number of Internal Banks SAMSUNG Memory DRAM DRAM Type Density Bit Organization 1. Memory (K) 2. DRAM: 4 3.
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1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (VDD, VDDQ) Number of Internal Banks SAMSUNG Memory DRAM DRAM Type Density Bit Organization XDR DRAM J: BOC(LF) P: BOC Mobile DRAM Leaded / Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X /Z: 54balls BOC Mono J /V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.
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Module DRAM Ordering Information 1 2 3 4 5 6 7 8 9 10 11 12 13 M X XX T XX X X X X X X XX X AMB Vendor Speed Temp & Power PCB Revision Package Component Revision SAMSUNG Memory DIMM Data bits DRAM Component Type Depth Number of Banks Bit Organization 1. Memory Module: M 2. DIMM Type 3: DIMM 4: SODIMM 3.
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SLC Flash MOQ Density 128Gb ODP 64Gb QDP 16Gb Based 32Gb DDP 16Gb Mono 16Gb QDP 4Gb Based 8Gb DDP 4Gb Mono 2Gb Based 1Gb Based 2Gb Mono 1Gb Mono Part Number Package Type Org. Vol(V) Tray T/R -xxxx0xx -xxx0Txx Status K9QDGD8S5M-HCB* BGA x8 1.8 960 1000 C/S K9QDGD8U5M-HCB* BGA x8 3.3 960 1000 C/S K9QDG08U5M-HCB* BGA x8 3.3 960 1000 C/S K9WCGD8S5M-HCB* BGA x8 1.8 960 1000 C/S K9WCGD8U5M-HCB* BGA x8 3.3 960 1000 C/S K9WCG08U5M-HCB* BGA x8 3.
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MLC Flash Type 2bit 3bit Family Density Technology Part Number MOQ Package Type Org. Vol(V) Tray T/R -xxxx0xx -xxx0Txx Status 256Gb ODP 32nm Ep-MLC K9PFGD8U5M-HCE* BGA x8 3.3 720 - C/S Now 32Gb Based 128Gb QDP 32nm Ep-MLC K9HDGD8U5M-HCE* BGA x8 3.3 720 - C/S Now 64Gb DDP 32nm Ep-MLC K9LCGD8U1M-HCE* BGA x8 3.3 720 - C/S Now 64Gb Based 256Gb ODP 35nm K9ACGD8U0M-SCB* 52LGA x8 3.3 720 2000 MP 128Gb QDP 27nm K9HDG08U1A-SCB* 48TSOP x8 3.
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FLASH Product Ordering Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 K 9 X X X X X X X X - X X X X 1. Memory (K) 2. NAND Flash : 9 3. Small Classification (SLC : Single Level Cell, MLC : Multi Level Cell) 7 : SLC moviNAND 8 : MLC moviNAND F : SLC Normal G : MLC Normal H : MLC QDP K : SLC DDP L : MLC DDP M : MLC DSP N : SLC DSP P : MLC 8 Die Stack Q : SLC 8 Die Stack S : SLC Single SM T : SLC SINGLE (S/B) U : 2 Stack MSP W : SLC 4 Die Stack 4~5.
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High-Speed Asynchronous SRAM Density Organization 256Kx16 4Mb 512Kx8 Part Number Package Vcc (V) Speed (ns) Operating Temp. Operating Current (mA) Standby Current (uA) Production Status K6R4016C1D 44-SOJ, 44-TSOP2 5 10 I 65, 55 20, 5 Mass Production K6R4016V1D 44-SOJ, 44-TSOP2 3.3 10 I 80, 65 20, 5 (1.2) Mass Production K6R4008C1D 36-SOJ, 44-TSOP2 5 10 I 65, 55 20, 5 Mass Production K6R4008V1D 36-SOJ, 44-TSOP2 3.
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Type Density 72Mb 36Mb 18Mb NtRAM 8Mb 4Mb Organization Part Number Package Operating Mode Vdd (V) Access Time tCD (ns) Speed tCYC (MHz) I/O Voltage (V) Production Status 2Mx36 K7N643645M 100-TQFP SPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production 4Mx18 K7N641845M 100-TQFP SPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production 1Mx36 K7N323631C 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 2Mx18 K7N321831C 100-TQFP, 165FBGA SPB 3.3, 2.5 2.6, 3.
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DDR Synchronous SRAM Type Density 16Mb DDR 8Mb Organization Part Number Package Vdd (V) Access Time tCD (ns) Cycle Time I/O Voltage (V) Production Status 512Kx36 K7D163674B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production 1Mx18 K7D161874B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production 256Kx36 K7D803671B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs 512Kx18 K7D801871B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.
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QDR SYNCHRONOUS SRAM Density Organization 1Mx18 QDR I 18Mb 512Kx36 8Mx9 72Mb 4Mx18 2Mx36 4Mx9 QDR II 36Mb 2Mx18 1Mx36 2Mx9 18Mb 1Mx18 Part Number Package Vdd (V) Access Time tCD (ns) Cycle Time I/O Voltage (V) Production Status Comments K7Q161862B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B K7Q161864B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B K7Q163662B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.
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Synchronous SRAM Ordering Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 K 7 X X X X X X X X - X X X X X Packaging Type Speed Speed Temp, Power Package --Generation Vcc, Interface, Mode SAMSUNG Memory Sync SRAM Small Classification Density Density Organization Organization Vcc, Interface, Mode 1. Memory (K) 2. Sync SRAM: 7 3.
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MCP: NAND + MDDR Memory NAND Density 1Gb (x16) 2Gb (x16) NAND & MDRAM 4Gb (x16) DRAM Density/Organization Voltage (NAND-DRAM) Package 256/512Mb (x16) 1.8V - 1.8V 130/137FBGA 512Mb (x32) 1.8V - 1.8V 137FBGA 1Gb (x16,x32) 1.8V - 1.8V 130/137FBGA 2Gb (x32) 1.8V - 1.8V 137FBGA 2Gb*2 (x32, 2CS/2CKE) 1.8V - 1.8V 137FBGA 2Gb*2 (x32) 1.8V - 1.8V 240FBGA POP 4Gb*2 (x16) 2Gb*2 (x32, 2CS/2CKE) 1.8V - 1.8V 137FBGA 8Gb (x16) 2Gb*2 (x32) 1.8V - 1.
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3.5" Hard Disk Drives Family F4 F4EG-3 F3 EcoGreen F3 EcoGreen F2 (F2EG) F1DT F3EG 22 Capacity (GB) RPM Interface Buffer Sector Model 160 7200 SATA 3.0 Gbps 8 512 HD165GJ 160 7200 SATA 3.1 Gbps 16 512 HD166GJ 250 7200 SATA 3.2 Gbps 8 512 HD255GJ 250 7200 SATA 3.3 Gbps 16 512 HD256GJ 320 7200 SATA 3.4 Gbps 16 512 HD322GJ 1500 5400 SATA 3.5 Gbps 32 4K HD155UI 2000 5400 SATA 3.6 Gbps 32 4K HD204UI 160 7200 SATA 3.
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2.5" Hard Disk Drives Family Capacity (GB) RPM Interface Buffer Sector Model 160 5400 USB 2.0 8 512 HM162HX 250 5400 USB 2.0 8 512 HM252HX 320 5400 USB 2.0 8 512 HM322IX 500 5400 USB 2.0 8 512 HM502JX 160 5400 SATA 3.0 Gbps 8 512 HM161GI 250 5400 SATA 3.0 Gbps 8 512 HM251HI 320 5400 SATA 3.0 Gbps 8 512 HM321HI 500 5400 SATA 3.0 Gbps 8 512 HM501II 640 5400 SATA 3.0 Gbps 8 512 HM641JI 160 5400 SATA 3.0 Gbps 8 512 HM161HI 250 5400 SATA 3.
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Blu-ray H/H Interface Speed SATA BD Combo 12X Type Loading H/H Tray Type Loading Lightscribe Model X TS-HB43A / SH-B123A TS-HB43L / SH-B123L O Blu-ray Slim Interface Speed SATA BD Combo 4X Slim Tray Lightscribe Model X SN-B043D SN-B043P O Blu-ray Combo Slim External Interface Speed Type Loading Lightscribe Model USB 2.
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DID Product Classification E-DID: Exclusive DID Super Narrow Panoramic display Wall-mounted Narrow P-DID: Performance DID B-DID: Basic DID Large Format Display » Thin/Light » (Edge LED) » Narrow » Black Bezel Outdoor: High Luminance » 1500 – 2000nit » 70” / 82” Landscape / Portrait convertible Why DID Instead of TV? Commercial (DID) Consumer (TV) Warranty 18 months to 2 years 90 days to 1 year Reliability Designed for continuous use in different environments Turned on for 20 hours + Variet
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Samsung Digital Information Display (DID) Panel Lineup Type Current Model New Model LTI430LA01-0 - E-DID P-DID Bezel Backlight Brightness (typical) Contrast Ratio Response Time Frequency MP* Comment 43" 1920X480 Narrow CCFL 700 nits 3,000:1 8ms 60Hz Now Panoramic 43" 1920X480 Narrow E-LED 450 nits 3,000:1 6ms 60Hz 2011.
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Tablets Size 7 9.7 10.
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Memory DRAM Flash SRAM MCP System LSI ASICs APs Display Drivers Imaging ICs Foundry Storage Solid State Drives Hard Drives Optical Disc Drives LCD Panels Displays Monitors Smartphones Tablets TVs samsung.com/us/business/oem-solutions Samsung Semiconductor, Inc. 3655 North First Street San Jose, CA 95134-1713 Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication.