User's Manual

HiLo3G-850 User Manual
04 March 2011 - Page 7 / 36
3. Functional Integration
Advancements in Silicon technologies head toward functionality improvement with less power consumption. The HiLo3G-
850 module with its industrial 40 pins connector meets all these requirements, using the latest high end technology in a
very compact design of only 27 x 27 x 4.8 mm and weighs less than 7 grams.
 All digital I/Os among the 40 pins are in the 2.9V domain suitable for most systems except SIM I/O's, which can also
be in the 1.8V domain depending on SIM-card use and PWON in the 1.8V domain.
 Analogical I/O are in the following power domains:
• VSIM  SIM I/Os in the 1.8V or 2.9V domain
• VBACKUP  3V domain
•VGPIO 2.9V domain
•VBAT from the 3.2V to the 4.4V domain. 3.7V is normal.
•VUSB 5V domain
•ADC 2.1V domain
•MIC_N/P 1.8V domain
•HSET_N/P VBAT domain
•Antenna RF power Amplifier is on VBAT domain
•Operation temperature from the -40℃ to the +85℃
 Do not power on the module I/O with a voltage over the specified limits. This could damage the module.
 Acoustic engineering competencies are mandatory to obtain accurate audio performance from customer products.
 Radio engineering competencies are mandatory to obtain accurate radio performance from customer products.
Figure 2: HiLo3G-850 module connector side
Figure 3: HiLo3G-850 module back side
3.1. How to connect a SIM card