Datasheet

EMH4 / UMH4N / IMH4A
!!Transistors
Rev.A 2/2
zElectrical characteristics (Ta=25qC)
Parameter Symbol Min. Typ. Max.
Unit
Conditions
Transition frequency
BV
CBO
BV CEO
BV EBO
I CBO
I EBO
V CE(sat)
h FE
f T
50
50
5
−
−
−
100
−
−
−
−
−
−
−
250
−
250
−
−
−
0.5
0.5
0.3
600
−
V
V
V
μA
μA
V
−
MHz
∗
R 1 71013
kΩ
I
C =50μA
I
C =1mA
I
E =50μA
V
CB =50V
V
EB =4V
V
CE =10V, I E = −5mA, f=100MHz
I
C /I B =10mA/1mA
V
CE =5V, I C =1mA
∗Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
zElectrical characteristics curves
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I C (A)
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
1k
500
200
100
50
20
10
5
2
1
V CE =5V
Ta
=
100
°
C
25
°C
−40°C
Fig.1 DC current gain vs. collector
current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I C (A)
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l C /l B =10
Ta=100°C
25°C
−40°C
Fig.2 Collector-emitter saturation
voltage vs. collector current