Datasheet

EMH3 / UMH3N / IMH3A
Transistors
Rev.A 2/2
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Limits
Unit
V
CBO 50 V
V
CEO 50 V
V
EBO 5V
I
C 100 mA
Tj 150 °C
Tstg −55 to +150 °C
Pc
EMH3,UMH3N 150 (TOTAL)
mW
IMH3A 300 (TOTAL)
∗
1
∗
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
BV
CBO
BV CEO
BV EBO
I CBO
I EBO
h FE
V CE(sat)
R 1
Min.
50
50
5
−
−
100
−
3.29
−
−
−
−
−
250
−
4.7
−
−
−
0.5
0.5
600
0.3
6.11
VI
C =50µA
I
C =1mA
I
E =50µA
V
CB =50V
V
EB =4V
V
CE =5V, I C =1mA
I
C /I B =5mA/0.25mA
−
V
V
µA
µA
−
V
kΩ
Typ.
Max. Unit Conditions
f
T −
250
− V CE =10V, I E =−5mA, f=100MHz ∗ MHz
∗
Transition frequency of the device
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Input resistance
zElectrical characteristic curves
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (A)
VCE= 5V
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
1k
500
200
100
50
20
10
5
2
1
Ta=100°C
25°C
−40°C
Fig.1 DC current gain vs. collector
current
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR CURRENT : IC (A)
Ta=100°C
25°C
−40°C
lC/lB=20
Fig.2 Collector-emitter saturation
voltage vs. collector current