Datasheet

ManualsBrandsROHM SEMICONDUCTOR ManualsDiodesSchottky Diode

RB751V-40

Diodes

Rev.B 1/3

Schottky barrier diode

RB751V-40

zApplications

UMD2

2.1

0.8MIN.

0.9MIN.

Low current rectification

zFeatures

Ultra small mold type. (UMD2)

2) Low V

3) High reliability

zConstruction

Silicon epitaxial planar

zExternal dimensions (Unit : mm)

zLand size figure

ROHM : UMD2

JEITA : SC-90/A

JEDEC : S0D-323

dot (year week factory)

0.3±0.05

0.7±0.2

　　　 0.1

0.1±0.1

　　　 0.05

1.7±0.1

2.5±0.2

1.25±0.1

zStructure

zTaping dimensions (Unit : mm)

4.0±0.1

2.0±0.05

φ1.55±0.05

1.40±0.1

4.0±0.1 φ1.05

2.75

3.5±0.05

1.75±0.1

8.0±0.2

0.3±0.1

1.0±0.1

2.8±0.1

zAbsolute maximum ratings (Ta=25°C)

Symbol Unit

Io m A

FSM

℃

Tstg

℃

Parameter

zElectrical characteristic (Ta=25°C)

Reverse voltage (DC)

verage rectified forward current

everse voltage (repetitive peak)

-40 to +125

Limits

orward current surge peak

（

60Hz

・

1cyc

）

200

unction temperature

torage temperature

125

Symbol Min. Typ. Max. Unit Conditions

--0.37V

=1mA

--0.5µA

=30V

Ct - 2 - pF

=1V , f=1MHz

Capacitance betw

Reverse current

Parameter

orward voltageF

een terminal

Summary of content (4 pages)

PAGE 1
RB751V-40 Diodes Schottky barrier diode RB751V-40 zLand size figure zExternal dimensions (Unit : mm) 0.1±0.1 0.05 0.9MIN. 0.8MIN. 1.25±0.1 1.7±0.1 2.1 zFeatures 1) Ultra small mold type. (UMD2) 2) Low VF 3) High reliability 2.5±0.2 zApplications Low current rectification UMD2 zConstruction Silicon epitaxial planar zStructure 0.7±0.2 0.1 0.3±0.05 ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) zTaping dimensions (Unit : mm) 0.3±0.1 φ1.55±0.05 2.0±0.05 4.0±0.1 1.40±0.
PAGE 2
RB751V-40 Diodes zElectrical characteristic curves Ta=125℃ Ta=125℃ Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 Ta=75℃ 10 Ta=25℃ 1 0.1 Ta=-25℃ 0.01 0.01 0 f=1MHz 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 0.001 100 200 300 400 500 600 700 800 900 1000 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 1 0.
PAGE 3
RB751V-40 Diodes 0.10 Io 0A 0V 0.08 t 0.06 DC 0.04 D=1/2 0.02 T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 Io 0A 0V 0.08 t 0.06 DC 0.04 D=1/2 0.02 T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 0.00 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.
PAGE 4
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered.