Datasheet

RB731U
Diodes
Rev.B 1/3
Schottky barrier diode
RB731U
z
Applications
Low current rectification
z
Features
1) Small mold type. (SMD6)
2) Low I
R
3) High reliability
z
External dimensions (Unit : mm)
z
Land size figure (Unit : mm)
z
Construction
Silicon epitaxial planar
z
Structure
z
Taping specifications (Unit : mm)
z
Absolute maximum ratings (Ta=25qC)
z
Electrical characteristics (Ta=25qC)
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㪇㪅㪏㪤㪠㪥㪅
㪈㪐
㪉㪅㪋
㪈㪅㪇㪤㪠㪥㪅
㪇㪅㪋㪌 㪇㪅㪊㪌
㪇㪅㪐㪌 㪇㪅㪐㪌
㪇㪅㪋㪌㪇㪅㪊㪌
㪇㪅㪍
Symbol Min. Typ. Max. Unit
Forward voltage
V
F
--0.37V
I
F
=1mA
Reverseu current
I
R
--1μA
V
R
=10V
Capacitance between terminals Ct - 2.0 - pF
V
R
=1V , f=1MHz
Parameter Conditions
Symbol Unit
V
RM
V
V
R
V
Io mA
I
FSM
mA
Tj
㷄
Tstg
㷄
Storage temperature -40 to +125
(*1)Per chip
̡
Io/3
Forward current surge peak (60Hz
̠
1cyc) 200
Junction temperature 125
Reverse voltage (DC) 40
Average rectified forward current (*1) 30
Parameter Limits
Reverse voltage (repetitive peak) 40
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㨪
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Each lead has same dimension
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㪉㪅㪇㫧㪇㪅㪇㪌
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䇭䇭䇭䇭䇭㩷㩷㪇
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㪏㪅㪇㫧㪇㪅㪉
㱢㪈㪅㪇㪌㪤㪠㪥
㪊㪅㪉㫧㪇㪅㪈
㪈㪅㪊㪌㫧㪇㪅㪈
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