Data Sheet

EMZ2 / UMZ2N / IMZ2A
Transistors
Rev.A 2/4
zElectrical characteristics (Ta=25°C)
Tr1
(PNP)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
EBO
ICBO
IEBO
VCE(sat)
hFE
BVCEO 50
6
120
0.1
0.1
0.5
560
V
V
µA
µA
V
I
C = 1mA
BV
CBO 60 −− VIC = 50µA
I
E = 50µA
V
CB = 60V
V
EB = 6V
I
C/IB = 50mA/5mA
V
CE = 6V , IC = 1mA
f
T
Cob
140
4
5
MHz
pF
V
CE = 12V , IE = 2mA , f = 100MHz
V
CB = 12V , IE = 0A , f = 1MHz
Tr
2
(NPN)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
EBO
ICBO
IEBO
VCE(sat)
hFE
BVCEO 50
7
120
0.1
0.1
0.4
560
V
V
µA
µA
V
I
C = 1mA
BV
CBO 60 −−VIC = 50µA
I
E = 50µA
V
CB = 60V
V
EB = 7V
I
C/IB = 50mA/5mA
V
CE = 6V , IC = 1mA
f
T
Cob
180
2
3.5
MHz
pF
VCE = 12V , IE = 2mA , f = 100MHz
V
CB = 12V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Transition frequency of the device.
Transition frequency of the device.
zElectrical characteristics curves
PNP Tr
Fig.1 Grounded emitter propagation
characteristics
0.2
COLLECTOR CURRENT : Ic (
mA)
50
20
10
5
2
1
0.5
0.2
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
CE
= 6V
BASE TO EMITTER VOLTAGE : V
BE
(
V)
Ta=100˚C
25˚C
40˚C
Fig.2 Grounded emitter output
characteristics (I)
0.4
4
8
1.20
2
6
10
0.8 1.6 2.0
3.5µA
7.0
10.5
14.0
17.5
21.0
24.5
28.0
31.5
I
B
=0
Ta=25˚C
35.0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO MITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics (II)
40
80
53 421
20
60
100
0
I
B
=0
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
50µA
100
150
200
250
500
450
400
350
300