Datasheet

IMX8
Transistors
Rev.A 2/2
zElectrical characteristics
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V CE (V
)
Fig.1 Ground emitter output characteristic
s
2
4
6
8
10
4 8 12 16 2
0
0
I B =0µA
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
Ta = 25 °C
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V BE (V)
Fig.2 Ground emitter propagation characteristic
s
0
0.1
0.2
0.5
1
2
5
10
20
50
0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6
Ta
=
25
°C
V CE = 6V
COLLECTOR CURRENT : I C (mA)
DC CURRENT GAIN : h
FE
Fig.3 DC current gain vs. collector curre
nt
0.2 0.5 12 510 20 50
50
100
200
500
Ta = 25 °C
V CE = 1V
3 V
5 V
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF
)
Fig.7 Collector output capacitance
vs. collector-base voltage
−0.5 1 2 5 10 20
2
1
5
10
20
Ta = 25 °C
f = 1MHz
I
E= 0A
COLLECTOR TO BASE VOLTAGE : V CB (V
)
EMITTER INPUT CAPACITANCE : Cib
(pF
)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8 Emitter input capacitance
vs. emitter-base voltage
−0.5 1 2 5 10 20
2
1
5
10
20
Ta = 25 °C
f = 1MHz
I
C= 0A
COLLECTOR CURRENT : I C (mA)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V
)
Fig.5 Collector-emitter saturation voltag
e
vs. collector current ( )
12 510 20 50
0.02
0.05
0.1
0.2
0.5
Ta
=
100
°C
25
°C
−40
°C
I C /I B =10
COLLECTOR CURRENT : I E (mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.6 Gain bandwidth product vs. emitter curren
t
−0.5 −1 −2 −5 −10 −20 −50
100
200
500
50
V CE = 6V
Ta
=
25
°C
COLLECTOR CURRENT : I C (mA)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V
)
Fig.4 Collector-emitter saturation voltag
e
vs. collector current ( )
12 510 20 50
0.02
0.05
0.1
0.2
0.5
Ta
=
25
°C
I C /I B =50
10
20