Datasheet

EMX3 / UMX3N / IMX3
Transistors
Rev.A 2/3
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max.
Unit
Conditions
Transition frequency
BV
CBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
60
50
7
−
−
−
120
−
−
−
−
−
−
−
−
180
−
−
−
0.1
0.1
0.4
560
−
V
V
V
µA
µA
V
−
MHz
∗
Cob
−
2 3.5 pF
I
C=50µA
I
C=1mA
I
E=50µA
V
CB=60V
V
EB=7V
V
CE=12V, IE=−2mA, f=100MHz
V
CB=12V, IE=0mA, f=1MHz
I
C/IB=50mA/5mA
V
CE=6V, IC=1mA
∗Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
zElectrical characteristics curves
Fig.1 Grounded emitter propagation
characteristics
0
0.1
0.2
0.5
2
20
50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
5
10
Ta
=
100°
C
V CE =6V
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V BE (V)
25
°
C
−
55
°
C
Fig.2 Grounded emitter output
characteristics ( Ι )
0
20
40
60
80
100
0.4 0.8 1.2 1.6 2.00
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V CE (V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25°C
I B =0A
0.40mA
0.50mA
0.45mA
0
0
2
8
10
4 8 12 16
4
6
20
I B =0A
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V CE (V)
3µA
6µA
9µA
12µA
15µA
18µA
21µA
24µA
27µA
30µA
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
0.2
20
10
0.5 1 2 5 10 20 50 100 200
50
100
200
500
V CE =5V
3V
1V
Ta=25°C
Fig.4 DC current gain vs.
collector current ( Ι )
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I C (mA)
0.2 0.5 1 2 5 10 20 50 100 200
20
10
50
100
200
500
25°C
−55°C
Ta=100°C
V CE = 5V
Fig.5 DC current gain vs.
collector current ( ΙΙ )
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I C (mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(V)
COLLECTOR CURRENT : I C (mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
I C /I B =50
20
10
Ta=25°C