Datasheet

EMH11 / UMH11N / IMH11A
Transistors
Rev.A 2/3
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Limits
Unit
V
CC 50 V
V
IN
−10
40
V
I
O 50 mA
IC (Max.) 100
150
mA
Tstg −55 to +150 °C
°C
Pd
EMH11,UMH11N 150 (TOTAL)
mW
IMH11A 300 (TOTAL)
∗
1
∗
2
Tj
Supply voltage
Input voltage
Output current
Collector current
Storage temperature
Power
dissipation
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
Junction temperature
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
I
V I (off)
V I (on)
V O (on)
I O (off)
R 1
G I
R 2 /R 1
Min.
−
3
−
−
−
7
30
0.8
−
−
−
−
10
−
1
0.5
−
0.30.1
0.88
0.5
13
−
1.2
V
V
CC =5V, I O =100µA
V
O =0.3V, I O =10mA
I
O /I I =10mA/0.5mA
V
I =5V
V
CC =50V, V I =0V
−
V
O =5V, I O =5mA
V
mA
µA
kΩ
−
−−
Typ. Max. Unit Conditions
f T
− 250 −
V
CE =10V, I E =−5mA, f=100MHz
MHz
∗
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
∗
Transition frequency of the device
zElectrical characteristic curves
INPUT VOLTAGE : V
I (on) (V)
OUTPUT CURRENT : I O (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
100
50
20
10
5
2
1
500m
200m
100m
V O =0.3V
Ta=−40°C
25°C
100°C
INPUT VOLTAGE : V I (off) (V)
OUTPUT CURRENT : Io
(A)
Fig.2 Output current vs. input voltage
(OFF characteristics)
03
10m
1µ
2m
5m
1m
200µ
500µ
100µ
20µ
50µ
10µ
2µ
5µ
0.5 1 1.5 2 2.5
V CC =5V
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : IO (A)
DC CURRENT GAIN : GI
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
1k
500
200
100
50
20
10
5
2
1
VO=5V
Fig.3 DC current gain vs. output
current
Ta=100°C
25°C
−40°C