Datasheet
IMD10A
Transistors
Rev.B 2/3
zElectrical characteristics (Ta=25°C)
DTr
1
DTr
2
Parameter
Symbol
Min. Typ. Max. Unit Conditions
∗
Transition frequency of the device.
V
I(off)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
−
−
−
−
−
−
68
−
−
70
−
−
0.1
−
−
−
−
−
−
−
−
−
−
−
−
−
200
100
−
0.3
−
0.3
−
25
−
0.5
−
−
130
V
V
mA
µA
−
MHz
∗
Ω
V
CC
=
−
5V , I
O
=
−
100µA
V
I(on)
−
1.5
−−
V
O
=
−
0.3V , I
O
=
−
100mA
I
O
=
−
100mA , I
I
=
−
5mA
V
I
=
−
2V
V
CC
=
−
50V , V
I
=
0V
I
O
=
−
100mA , V
O
=
−
5V
V
CE
=
−
10V , I
E
=
50mA , f
=
100MHz
−
R
2
/
R
1
80 100 120
−
−
−
−
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
50
50
5
100
7
250
10
0.5
0.5
0.3
600
13
V
V
V
µA
µA
V
kΩ
I
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
50V
V
EB
=
4V
I
C
=
10mA , I
B
=
1mA
V
CE
=
5V , I
C
=
1mA
Transition frequency f
T
250 MHz
∗
V
CE
=
10V , I
E
=
−
5mA , f
=
100MHz
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
−