Datasheet

FMN1
Diodes
Rev.C 1/2
Switching diode
FMN1
zApplication
z
Dimensions (Unit : mm)
z
Land size figure (Unit : mm)
Ultra high speed switching
zFeatures
1) Small mold type. (SMD5)
2) High reliability
zConstruction
Silicon epitaxial planar
z
Structure
z
Taping specifications (Unit : mm)
z
Absolute maximum ratings (Ta=25qC)
z
Electrical characteristics (Ta=25qC)
Symbol Min. Typ. Max. Unit Conditions
V
F
--0.9V
I
F
=5mA
I
R
--0.1μA
V
R
=70V
Ct - - 3.5 pF
V
R
=6V , f=1MHz
trr - - 4 ns
V
R
=6V , IF=5mA , RL=50
Reverse recovery time
Capacitance between terminals
Reverse current
Parameter
Forward voltage
㪪㪤㪛㪌
㪇㪅㪏㪤㪠㪥㪅
㪈㪅㪇㪤㪠㪥
㪇㪅㪋㪌
㪇㪅㪊㪌
㪈㪅
㪇㪅㪐㪌 㪇㪅㪐㪌
㪇㪅㪋㪌
㪇㪅㪊㪌
㪇㪅
㪉㪅
㪊㪅㪉㫧㪇㪅
㪋㪅㪇㫧㪇㪅
㪋㪅㪇㫧㪇㪅
㪉㪅㪇㫧㪇㪅㪇㪌
㱢㪈㪅㪌㫧㪇㪅㪈
䇭䇭䇭䇭䇭㩷㩷
㪊㪅㪌㫧㪇㪅㪇㪌
㪈㪅㪎㪌㫧㪇㪅
㪏㪅㪇㫧㪇㪅
㱢㪈㪅㪇㪤㪠㪥
㪊㪅㪉㫧㪇㪅㪈
㪈㪅㪊㪌㫧㪇㪅
㪊㪅㪉㫧㪇㪅㪈
㪇㪅㪊㫧㪇㪅㪈
㪌㪅㪌㫧㪇㪅㪉
㪇䌾㪇㪅㪌
㪤㩷㪑㩷㪪㪛㪌
㪠㪫㪘㩷㪪㪚㪄㪎㪋㪘
㪼㪼㫂㪺㫆㪻
r
r
r

㧗
㧙
 
ฦ࡝࡯࠼ߣ߽หኸᴺ
㨪
 



㨪
r
ޓޓޓ
r

r

㧗
ޓ㧙
Each lead has same dimension
Symbol Unit
V
RM
V
V
R
V
I
FM
mA
Io mA
I
sur
g
e
mA
Pd mW
Tj
Tstg
Parameter
Reverse voltage (DC)
Average rectified forward current
Reverse voltage (repetitive)
Forward current
̈́
Single
ͅ
Power dissipation
Limits
80
25
80
80
Surge current(t=1us) 250
Junction temperature
Storage temperature
150
-55 to +150
80

Summary of content (3 pages)