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EMH3 / UMH3N / IMH3A

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Outline

Features

1) Built-In Biasing Resistors.

2) Two DTC143T chips in one package.

3) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit).

4) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

Inner circuit

of the input. They also have the advantage of

completely eliminating parasitic effects.

5) Only the on/off conditions need to be set for

operation, making the circuit design easy.

6) Lead Free/RoHS Compliant.

Application

Inverter circuit, Interface circuit, Driver circuit

Packaging specifications

3,000

UMH3N

UMT6

2021

180

SMT6

2928

T108

180

8,000

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

EMH3

EMT6

1616

T2R

180

3,000

IMH3A

Part No.

Package

size

(mm)

Taping

code

4.7kW

Parameter

Tr1 and Tr2

CEO

50V

C(MAX.)

100mA

EMT6

UMT6

SMT6

EMH3

(SC-107C)

IMH3A

SOT-457 (SC-74)

UMH3N

SOT-353 (SC-88)

EMH3 / UMH3N

IMH3A

Collector

(6)

(2)

Base

(1)

Emitter

(3)

Collector

Base

(5)

Emitter

(4)

Collector

(4)

(2)

Base

(3)

Emitter

(1)

Collector

Base

(5)

Emitter

(6)

(5)

(4)

(1)

(2)

(3)

(4)

(5)

(6)

(3)

(2)

(1)

(6)

(5)

(4)

(1)

(2)

(3)

1/6

2012.06 - Rev.B

Summary of content (7 pages)

PAGE 1
EMH3 / UMH3N / IMH3A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 4.7kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH3 (SC-107C) UMH3N SOT-353 (SC-88) SMT6 (4) lFeatures (5) (6) 1) Built-In Biasing Resistors. 2) Two DTC143T chips in one package.
PAGE 2
Data Sheet EMH3 / UMH3N / IMH3A lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC(MAX.
PAGE 3
Data Sheet EMH3 / UMH3N / IMH3A lElectrical characteristic curves(Ta = 25°C) Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics 100 10 Ta=25ºC COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) VCE=5V 1 0.1 IB= 500μA Ta=100ºC 25ºC -40ºC 0.01 450μA 400μA 80 350μA 300μA 60 250μA 200μA 40 150μA 100μA 20 50μA 0A 0 0.001 0 0.5 1 1.5 0 2 BASE TO EMITTER VOLTAGE : VBE (V) 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.
PAGE 4
Data Sheet EMH3 / UMH3N / IMH3A lDimensions (Unit : mm) D EMT6 A x c S A Lp Lp HE L E L b A1 y S l1 A e1 e S e b2 Patterm of terminal position areas DIM A1 A b c D E e HE L Lp x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.00 0.10 0.45 0.55 0.17 0.27 0.08 0.18 1.50 1.70 1.10 1.30 0.50 1.50 1.70 0.10 0.30 0.35 0.10 0.10 MILIMETERS MIN MAX 1.25 0.37 0.45 INCHES MIN 0 0.018 0.007 0.003 0.059 0.043 MAX 0.004 0.022 0.011 0.007 0.067 0.051 0.02 0.059 0.004 - 0.067 0.012 0.014 0.004 0.
PAGE 5
Data Sheet EMH3 / UMH3N / IMH3A lDimensions (Unit : mm) D A e c x Lp A3 S A e l1 A1 y S e1 A b HE E Q L1 UMT6 S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.80 1.00 0.00 0.10 0.25 0.15 0.30 0.10 0.20 1.90 2.10 1.15 1.35 0.65 2.00 2.20 0.20 0.50 0.25 0.55 0.10 0.30 0.10 0.10 MILIMETERS MIN MAX 1.55 0.40 0.65 INCHES MIN 0 MAX 0.039 0.004 0.01 0.006 0.004 0.075 0.045 0.012 0.008 0.083 0.053 0.03 0.079 0.008 0.01 0.
PAGE 6
Data Sheet EMH3 / UMH3N / IMH3A lDimensions (Unit : mm) SMT6 D A e c L1 Lp HE E Q b A3 x S A y S A1 l1 A e1 e S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 1.00 1.30 0.00 0.10 0.25 0.25 0.40 0.09 0.25 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.20 0.30 0.20 0.10 MILIMETERS MIN MAX 2.10 0.60 0.90 INCHES MIN 0.039 0 MAX 0.051 0.004 0.01 0.01 0.004 0.11 0.059 0.016 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.
PAGE 7
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