Datasheet
Table Of Contents
EMD6 / UMD6N / IMD6A
Transistors
Rev.A 2/2
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
R
1
Min.
50
50
5
−
−
100
−
3.29
−
−
−
−
−
250
−
4.7
−
−
−
0.5
0.5
600
0.3
6.11
VI
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
50V
V
EB
=
4V
V
CE
=
5V, I
C
=
1mA
−
I
C
/I
B
=
5mA/0.25mA
V
V
µA
µA
−
V
kΩ
Typ. Max. Unit Conditions
f
T
− 250 −
V
CE
=
10V, I
E
=
−5mA, f
=
100MHz
MHz
∗
Transition frequency of the transistor
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Input resistance
zPackaging specifications
Package
Code TR T108
3000 3000
Taping
Basic ordering
unit (pieces)
UMD6N
T2R
8000
EMD6
IMD6A
Type
zElectrical characteristic curves
DTr
1 (NPN)
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
V
CE
=
5V
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
1k
500
200
100
50
20
10
5
2
1
Ta=100˚C
25˚C
−40˚C
Fig.1 DC current gain vs. collector
current
100
µ
200
µ
500
µ
1m 2m 5m 10m 20m 50m100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
COLLECTOR CURRENT : IC (A)
Ta=100˚C
25˚C
−40˚C
lC/lB=20
Fig.2 Collector-emitter saturation
voltage vs. collector current
DTr2 (PNP)
V
CE
=−5V
−100µ−1m
−10m
−200µ−2m
−20m
−500µ−5m
−50m−100m
1k
500
200
100
50
20
10
5
2
1
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C (A)
−40˚C
25˚C
Ta=100˚C
Fig.3 DC current gain vs. collector
current
l
C
/l
B
=20
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−1
−100µ−1m
−10m
−200µ−2m
−20m
−500µ−5m
−50m−100m
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(
V)
COLLECTOR CURRENT : I
C
(A)
Ta=100˚C
25˚C
−40˚C
Fig.4 Collector-emitter saturation
voltage vs. collector current