Datasheet

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Data Sheet
EMB11 / UMB11N / IMB11A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Parameter
Symbol
Values
Unit
V
CC
-50
V
V
IN
-40 to +10
V
I
O
-50
mA
I
C(MAX.)
*1
-100
mA
EMB11 / UMB11N
P
D
*2
150 (Total)
*3
mW
IMB11A
300 (Total)
*4
mW
Unit
Min.
Typ.
Max.
T
j
150
°C
T
stg
-55 to +150
°C
Parameter
-
-
Input voltage
V
I(off)
V
CC
= -5V, I
O
= -100mA
Symbol
Conditions
-3.0
-
mA
-
-0.1
-0.3
mA
-
-
-0.88
20
-
-
-
-
-
-0.5
kW
0.8
1
1.2
-
7
10
13
MHz
-
250
-
Transition frequency
f
T
*1
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
Resistance ratio
R
2
/R
1
-
Input current
I
I
V
I
= -5V
Output current
I
O(off)
V
CC
= -50V, V
I
= 0V
DC current gain
G
I
V
O
= -5V, I
O
= -5mA
Input resistance
R
1
-
V
V
I(on)
V
O
= -0.3V, I
O
= -10mA
Output voltage
V
O(on)
I
O
/ I
I
= -10mA / -0.5mA
V
-
-0.5
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2012.06 - Rev.B