Datasheet

2/16
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W
Technical Note
7~13 b i t *1
8bit
7~13bit *1
8bit
CS
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
INSTRUCTION
REGISTER
ADDRESS
REGISTER
ADDRESS
DECODER
1K~64K
EEPROM
STATUS REGISTER
DATA
REGISTER
READ/WRITE
AMP
VOLTAGE
DETECTION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
SCK
SI
HOLD
WP
SO
*1
7bit : BR25L010-W
8bit : BR25L020-W
9bit : BR25L040-W
10bit : BR25L080-W
11bit : BR25L160-W
12bit : BR25L320-W
13bit : BR25L640-W
Block diagram
- 0.3 ~ +6.5
Limits
- 65 ~ +125
- 40 ~ +85
Terminal voltage
Impressed voltage
Storage
temperature range
Parameter
Operating
temperature range
Symbol Unit
V
CC
Tst g
Top r
–
- 0.3 ~ VCC+0.3
Permissible
dissipation
Pd
450(SOP8)
*1
450(SOP-J8)
*2
300(SSOP-B8)
*3
330( TSSOP-B8 )
*4
310(MSOP8)
*5
310(TSSOP-B8J)
*6
Number of data rewrite times
Data hold years
Parameter
1,000,000
Min.
–
Limits
Typ.
–
Max.
Times
40
––Years
Unit
Input / output capacity (Ta=25˚C, frequency=5MHz)
Parameter Symbol Conditions Min. Max. Unit
Input capacity CIN VIN=GND – 8pF
Output capacity COUT VOUT=GND – 8pF
*1
*1
*1
*1
*1:Not 100% TESTED
*1:Not 100% TESTED
Parameter Symbol
Limits
Min.
Typ.
Max.
Unit Conditions
0
–
0.4
"L" output voltage 1
IOL
=
2.1mA(V
CC
=
2.5V ~ 5.5V)
VOL1
V
IOL
=
150μA(V
CC
=
1.8V ~ 2.5V)
V
0
– 0.2
"L" output voltage 2
VOL2
- 1
–
1
Input leak current
VIN
=
0 ~ V
CC
ILI
μA
V
OUT
=
0 ~ V
CC,CS
=
VCC
μA
- 1
–
1
Output leak current
ILO
0.7x
V
CC
VCC
+0.3
–
0.3x
VCC
–
"H" input voltage 1
1. 8 ≤V
CC≤5.5V
1. 8 ≤V
CC≤5.5V
VIH1 V
–
2
–
Standby current
VCC
=
5.5V
CS
=
HOLD
=
WP
=
V
CC,SCK
=
SI
=
VCC or
=
GND,SO=OPEN
ISB
μA
V
CC
- 0.5
V
CC
–
"H" output voltage 1
IOH
=
- 0.4mA(VCC
=
2.5V ~ 5.5V)
VOH1
V
V
CC
- 0.2
V
CC
–
"H" output voltage 2
Current consumption at read
action
IOH
=
- 100μA(VCC
=
1.8V ~ 2.5V)
VOH2
V
–
1.0
–
Current consumption at write
action
I
CC1
mA
–
2.0
–
ICC2
mA
- 0.3
"L" input voltage 1
VIL1 V
V
CC
=
1.8V,fSCK
=
2MHz,tE/W
=
5ms
Byte write
Page write
Write status register
V
CC
=
2.5V,fSCK
=
5MHz,tE/W
=
5ms
Byte write
Page write
Write status register
– 3.0
–
ICC3
mA
V
CC
=
5.5V,fSCK
=
5MHz,tE/W
=
5ms
Byte write
Page write
Write status register
–
1. 5
–
ICC4mA
V
CC
=
2.5V,fSCK
=
5MHz
Read
Read status register
– 2.0
–
ICC5
mA
V
CC
=
5.5V,fSCK
=
5MHz
Read
Read status register
V
mW
˚C
˚C
V
Recommended action conditions
Memory cell characteristics (Ta=25˚C, VCC=1.8 ~ 5.5V)
Parameter Symbol Limits Unit
Power source voltage V
CC 1.8 ~ 5.5
V
Input voltage Vin 0 ~ V
CC
• Radiation resistance design is not made.
Absolute maximum ratings (Ta = 25˚C)
Electrical characteristics (Unless otherwise specified, Ta = –40 ~ +85˚C, VCC = 1.8 ~ 5.5V)
Fig.1 Block diagram
¢When using at Ta = 25˚C or higher, 4.5mW (*1, *2), 3.0mW (*3),
3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1˚C
2010.07 - Rev. B
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