Datasheet

Technical Note
9/48
BA4558F,BA4558R F/FV/FVM,BA4560F,BA4560RF/FV/FVM,BA4564RFVBA4580RF/FVM,BA4584FV,
BA4584RF/FV,BA8522RF/FV/FVM,BA15218F,BA14741F,BA15532F,BA4510F/FV,BA2115F/FVM
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2011.08 - Rev.B
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Electrical characteristics
BA8522R family (Unless otherwise specified VCC=+15[V], VEE=-15[V], Ta=25[])
Parameter Symbol
Temperature
Range
Limits
Unit Condition
BA8522R F/FV/FVM
Min. Typ. Max.
Input Offset Voltage
(*20)
Vio 25 - 0.1 1.5 mV
Input Offset Voltage drift
(*20)
Vio/ΔT - 2 - μV/
Input Offset Current
(*20)
Iio 25 - 5 200 nA
Input Bias Current
(*21)
Ib 25 - 50 500 nA
Supply Current ICC 25 - 5.5 9 mA
RL= All Op-Amps
VIN+=0[V]
Maximum Output Voltage VOM 25
±12 ±13.5 V RL10[k]
±10.5 ±11 - V RL2[k]
Large Signal Voltage Gain AV 25 86 110 - dB RL10[k], VOUT=±10[V]
Input Common-mode Voltage Range Vicm 25 ±12 ±14 - V
Common-mode Rejection Ratio CMRR 25 70 90 - dB
Power Supply Rejection Ratio PSRR 25 76.5 90 - dB
Channel Separation CS 25 - 105 - dB
Slew Rate SR 25 - 3 - V/μs
Unity Gain Frequency ft 25 - 6 - MHz
Input Referred Noise Voltage Vni 25 - 1.2 - μVrms
Total Harmonic Distortion THD 25 - 0.002 - %
Av=20[dB], VOUT=5[Vrms]
f=1[kHz]
(*20) Absolute value
(*21) Current direction: Since first input stage is composed with PNP transistor, input bias current flows out of IC.