Datasheet

1SS355
Diodes
Rev.C 2/3
zElectrical characteristic curves (Ta=25°C)
0
10
20
30
40
50
60
70
80
90
100
900
910
920
930
940
950
IF(mA)
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mA)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
trr DISPERSION MAP
RESERVE RECOVERY TIME:trr(ns)
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
0.0001
0.001
0.01
0.1
1
10
0 20406080100120
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
0.1
1
10
0102030
f=1MHz
AVE:922.4mV
Ta=25
IF=100mA
n=30pcs
Ta=25℃
VR=80V
n=30pcs
AVE:31.7nA
0.9
0.91
0.92
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1
AVE:0.961pF
Ta=25℃
VR=0.5V
f=1MHz
n=10pcs
0
5
10
15
20
AVE:13.6A
8.3ms
Ifsm
1cyc
0
0.5
1
1.5
2
2.5
3
AVE:1.3ns
Ta=25℃
VR=6V
IF=10mA
RL=100Ω
0
5
10
15
20
0.1 1 10 100
8.3ms
Ifsm
1cyc
8.3ms
1
10
100
0.1 1 10 100
t
Ifsm
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA
IF=10mA
300us
time
Mounted on epoxy board
0
0.0005
0.001
0 20406080100120
Sin(θ＝180)
D=1/2
DC