Datasheet

Silicon Epitaxial Planar Switching
Diode
VF
10
-1
1
10
2
10
10
3
LL 414
8
iF
Forward characteristics
-2
10
V20
Tj=25
o
C
Tj=100 C
o
1
0.7
0.8
0
VR
6
0 10 V
1.1
1.0
0.9
C
to
t(VR)
C
tot(0V)
LL 4148
Relative capacitance
versus reverse voltage
42 8
Tj=25
o
C
f=1MHz
100
150
Ambient Temperature: Ta (
O
C)
0
25
0
100
200
300
Power Dissipation: Ptot (mW)
400
500
200
Power Derating Curve
LL 4148
T
j
VR=20V
0
10
2
5
1
2
5
10
2
10
0
Leakage current
versus junction temperature
4
5
nA
3
5
2
2
IR
10
10
200
o
C
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