Datasheet

Silicon Epitaxial Planar Switching
Diode
Characteristics at T
a
= 25℃
Max. Unit
Reverse Breakdown Voltage
tested with 100 µA Pulses
100 V
(BR)R
- V
Forward Voltage
at I
F
= 10 mA
V
F
- 1 V
Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150℃
I
R
I
R
I
R
-
-
-
25
5
50
nA
µA
µA
Capacitance
at V
R
= 0, f = 1 MHz
C
tot
- 4 pF
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
V
fr
- 2.5 V
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 1 mA, Irr = 0.1 x I
R
,V
R
= 6 V, R
L
=
100 Ω
t
rr
- 4 ns
Symbol
Min.
Distrelec Schweiz AG, Grabenstrasse 6, 8606 Nänikon, Switzerland, T [phone], [e-mail], distrelec.com