Datasheet

PNP Silicon Epitaxial Transistor
DC Current Gain
at- V
CE
= 5 V, -I
C
= 2 mA
Collector Base Cutoff Current
at- V
CB
= 30 V
I
CBO
- 15 nA
Collector Base Breakdown Voltage
at- I
C
= 10 µA
50 - V
Collector Emitter Breakdown Voltage
at- I
C
= 10 µA
50
- V
Collector Emitter Breakdown Voltage
at- I
C
= 10 mA
45 -
V
Emitter Base Breakdown Voltage
at -I
E
= 1 µA
5 V
Collector Emitter Saturation Voltage
at- I
C
= 10 mA, -I
B
= 0.5 mA
at- I
C
= 100 mA, -I
B
= 5 mA
-
-
0.3
0.65
V
V
Base Emitter On Voltage
at- V
CE
= 5 V, -I
C
= 2 mA
at- V
CE
= 5 V, -I
C
= 10 mA
0.6
-
0.75
0.82
V
V
Current Gain Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA, f = 100 MHz
fT
100 - MHz
Collector Output Capacitance
at -V
CB
= 10 V, f = 1 MHz
C
ob
- 6 pF
h
FE
420
800
-
V(BR)CBO
V
(BR)CES
V(BR)CEO
V(BR)
EBO
V
CE(sat)
Characteristics at T
a
= 25°C
Symbol
Unit
Min.
Max.
VB
E(on)
-
Distrelec Schweiz AG, Grabenstrasse 6, 8606 Nänikon, Switzerland, T [phone], [e-mail], distrelec.com