Datasheet

Features
PNP Silicon Epitaxial Transistor
• Silicon epitaxial planar transistors
• For switching and amplifier applications
Unit
Collector Base Voltage
-V
CBO
50
V
Collector Emitter Voltage
-V
CEO
V
Emitter Base Voltage
-V
EBO
5
Collector Current
-
I
C
100
mA
Peak Collector Current
-I
CM
200
mA
Total Power Dissipation
P
tot
200
mW
Junction Temperature
T
j
150
O
C
Storage Temperature Range
T
stg
- 65 to + 150
O
C
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
V
Value
45
TO-236 Plastic Package
Art. Nr.
R
ND BC847C REEL
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