Datasheet

Features
NPN Transistors
• Silicon epitaxial planar transistors
• For switching and amplifier applications
Unit
Collector Base Voltage
-V
CBO
50
V
Collector Emitter Voltage
-V
CEO
V
Emitter Base Voltage
-V
EBO
6
Collector Current
-
I
C
100
mA
Peak Collector Current
-I
CM
200
mA
Total Power Dissipation
P
tot
200
mW
Junction Temperature
T
j
150
O
C
Storage Temperature Range
T
stg
- 55 to + 150
O
C
Characteristics at T
a
= 25°C
Parameter
Symbol Unit
DC Current Gain
at -V
CE
= 5 V, -I
C
= 2 mA
h
FE
100
200
420
Collector Emitter Voltage
at IC = 10 mA
I
CBO
65
-
V
Emitter Base Voltage
at IE = 1 µA
V
EBO
6
-
V
Collector Base Cutoff Current
at -VCB = 30 V
-
15
nA
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
-
100
nA
Collector Emitter Saturation Voltage
V
CE(sat)
-
V
Base Emitter On Voltage
at VCE = 5 V, IC = 2 mA
V
BE
-
0.7
V
Transition Frequency
at -V
CE
= 5 V, -I
C
= 10 mA, f = 100 MHz
f
T
100
-
MHz
Collector O
utput Capacitance
at VCB = 10 V, IE = 0, f = 1 MHz
C
ob
--
pF
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
V
Min.
Max.
4.5
Value
80
45
65
RND BC846 (AW, B
W)
RN
D BC847 (AW, BW,
CW)
RN
D BC846 (AW, B
W)
RN
D BC847 (AW, BW,
CW)
RND BC846AW, RND BC847AW
RND BC846BW, RND BC847BW
RND BC847CW
200
450
800
-
-
-
Collector Base Voltage
at IC = 10 µA
RND BC846 (AW, BW)
RND BC847 (AW, BW, CW)
V
CBO
80
50
V
-
-
at VCE = 5 V, IC = 10 mA
0.58
0.77
at -I
C
= 10 mA, -I
B
= 0.5 mA
at -I
C
= 100 mA, -I
B
= 5 mA
0.25
0.6
V
CE
O
45
-
RND BC846 (AW, BW)
RND BC847 (AW, BW, CW)
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