Datasheet

NPN Silicon Epitaxial Transistor
Characteristics at T
a
= 25
O
C
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
at V
CE
= 5 V, I
C
= 2 mA
h
FE
420
-
800
-
Collector Base Cutoff Current
at V
CB
= 30 V
I
CBO
- - 15 nA
Collector Base Breakdown Voltage
at I
C
= 100 µA
V
(BR)CBO
50
-
-
V
Collector Emitter Breakdown Voltage
at I
C
= 2 mA
V
(BR)CEO
45
-
-
-
V
Collector Emitter Breakdown Voltage
at I
C
= 100 µA
V
(BR)EBO
6 - - V
Collector Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA at
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
V
CEsat
-
-
-
-
250
600
mV
mV
Base Emitter On Voltage
at V
CE
= 5 V, I
C
= 2 mA at
V
CE
= 5 V, I
C
= 10 mA
V
BE(on)
V
BE(on)
580
-
-
-
700
720
mV
mV
Transition Frequency
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
- 300 - MHz
Output Capacitance
at V
CB
= 10 V, f = 1 MHz
C
ob
- - 6 pF
Input Capacitance
at V
EB
= 0.5 V, f = 1 MHz
C
ib
- 9 - pF
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