Datasheet

Features

NPN Silicon Epitaxial Transistor

• Silicon epitaxial planar transistors

• For switching and amplifier applications

Absolute Maximum Ratings (Ta = 25°C)

Art. Nr.

RND BC847C REEL

Parameteraramet Valuee Unit

Collector Base Voltage

CBO

Collector Emitter Voltage

CEO

Emitter Base Voltage

EBO

Collector Current I

100 mA

Peak Collector Current I

200 mA

Power Dissipation P

tot

300 mW

Junction Temperature T

150

Storage Temperature Range T

stg

- 65 to + 150

Symbol

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NPN Silicon Epitaxial Transistor Features • Silicon epitaxial planar transistors • For switching and amplifier applications Absolute Maximum Ratings (Ta = 25°C) Symbol Value Unit VCBO 50 V VCEO 45 V VEBO 6 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Power Dissipation Ptot 300 mW Tj 150 O Tstg - 65 to + 150 O Parameter aramete Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Junction Temperature Storage Temperature Range Art. Nr.
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NPN Silicon Epitaxial Transistor Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE 420 - 800 - ICBO - - 15 V(BR)CBO 50 - - V V(BR)CEO 45 - - V V(BR)EBO 6 - - V VCEsat VCEsat - - 250 600 mV mV VBE(on) VBE(on) 580 - - 700 720 mV mV fT - 300 - MHz Output Capacitance at VCB = 10 V, f = 1 MHz Cob - - 6 pF Input Capacitance at VEB = 0.
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NPN Silicon Epitaxial Transistor STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE 100 I B =400 A I B =350 A 80 I B =300 A I B =250 A 60 I B =200 A I B =150 A 40 I B =100 A 20 I B =50 A I C(mA),COLLECTOR CURRENT I C(mA),COLLECTOR CURRENT 100 VCE=2V 10 1 0.1 0 0 4 8 12 16 0.2 0.4 0.6 0.8 1.2 1.