Datasheet

Features
NPN Silicon Epitaxial Transistor
• Silicon epitaxial planar transistors
• For switching and amplifier applications
Unit
Collector Base Voltage
-V
CBO
50 V
Collector Emitter Voltage
-V
CEO
45 V
Emitter Base Voltage
-V
EBO
5
Collector Current
-I
C
500 mA
Power Dissipation
Ptot
300
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
- 55 to + 150
O
C
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
V
O
C
Value
Art. Nr.
R
ND BC817-40 REEL
Electrical Characteristics at T
a
= 25
O
C
Min. Typ.
Max.
Unit
DC Current Gain
at V
CE
= 1 V, I
C
= 100 mA
at V
CE
= 1 V, I
C
= 500 mA
h
FE
h
FE
250
40
-
-
600
-
-
-
Collector Base Cutoff Current
at V
CB
= 20 V
I
CBO
- - 100
nA
Emitter Base Cutoff Current
at V
EB
= 5 V
I
EBO
- - 100
nA
Collector Emitter Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
V
CE(sat)
- - 0.7 V
Base Emitter Voltage
at I
C
= 500 mA, V
CE
= 1 V
V
BE(on)
- - 1.2 V
Transition Frequency
at V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
100 f
T
-
- MHz
Collector Base Capacitance
at V
CB
= 10 V, f = 1 MHz
C
ob
- 5 pF
Parameter
Symbol
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