Datasheet

NPN Transistors
Characteristics at Ta = 25°C
Parameter Max. Unit
Collector Emitter Saturation Voltage
atI
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
V
CE(sat)
-
-
0.25
0.6
V
Base Emitter On Voltage
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 10 mA
V
BE(on)
0.55
-
0.7
0.77
V
Transition Frequency
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
100 - MHz
Collector Base Capacitance
at V
CB
= 10 V, f = 1 MHz
C
cbo
- 6 pF
Symbol
Min.
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