Datasheet

Features
PNP Transistors
• Silicon epitaxial planar transistors
• For switching and amplifier applications
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Unit
Collector Base Voltage
-V
CBO
50 V
Collector Emitter Voltage
-V
CEO
45 V
Emitter Base Voltage
-V
EBO
5
Collector Current
-I
C
800 mA
Peak Collector Current
-I
CM
1 A
Total Power Dissipation
P
tot
625 mW
Junction Temperature
T
j
150
O
C
Storage Temperature Range
T
stg
- 55 to + 150
O
C
Characteristics at T
a
= 25°C
Parameter
Symbol Max. Unit
DC Current Gain
at -V
CE
= 1 V, -I
C
= 100 mA
at -V
CE
= 1 V, -I
C
= 300 mA
- RND BC327-16
- RND BC327-25
- RND BC327-40
- RND BC327-16
- RND BC327-25
- RND BC327-40
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
100
160
250
60
100
170
-
-
-
-
-
-
250
400
630
-
-
-
-
-
-
-
-
-
Collector Base Cutoff Current
at -V
CB
= 45 V
-I
CBO
-
-
100
nA
Collector Base Breakdown Voltage
at -I
C
= 100 µA
-V
(BR)CBO
50
- -
V
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
-
V
(BR)CEO
45 - -
V
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
-V
(BR)EBO
5 - V
Collector Emitter Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
-V
CE(sat)
- - 0.7
V
Base Emitter On Voltage
at -V
CE
= 1 V, -I
C
= 300 mA
-V
BE(on)
- - 1.2
V
Gain Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA, f = 50 MHz
-
f
T
1
00
-
MHz
Collector
Base Capacitance
at -V
CB
= 10 V, f = 1 MHz
C
cbo
--
pF
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
V
Min.
Typ.
-
-
12
Value
Distrelec Schweiz AG, Grabenstrasse 6, 8606 Nänikon, Switzerland, T [phone], [e-mail], distrelec.com