Datasheet
Transistor
Art. Nr.
RND 2N4401
TO-92 NPN 40 V 600 mA
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameteraramet Valuee
Unit
Collector Base Voltage
V
CBO
60 V
Collector Emitter Voltage V
CEO
40 V
Emitter Base Voltage V
EBO
6 V
Collector Current I
C
600 mA
Power Dissipation P
tot
625 mW
Junction Temperature T
j
150
O
C
Storage Temperature Range T
stg
- 55 to + 1 0
O
C
Characteristics at T
a
= 25
O
C
Parameterer Sym Min.b Max. Unit
DC Current Gain
at V
CE
= 1 V, I
C
= 0.1 mA
at V
CE
= 1 V, I
C
= 10 mA
at V
CE
= 1 V, I
C
= 150 mA
at V
CE
= 2 V, I
C
= 500 mA
h
FE
h
FE
h
FE
h
FE
h
FE
20
40
58
100
40
-
-
-
300
-
-
-
-
-
-
Collector Base Cutoff Current
at V
CB
= 35 V
I
CBO
- 100 nA
Emitter Base Cutoff Current
at V
EB
= 5 V
I
EBO
10- nA
Collector Base Breakdown Voltage
at I
C
= 100 µA
V
(BR)CBO
60 - V
Collector Emitter Breakdown Voltage
at I
C
= 1 mA
V
(BR)CEO
40 - V
Emitter Base Breakdown Voltage
at I
E
= 100 µA
V
(BR)EBO
6 - V
Collector Emitter Saturation Voltage
at I
C
= 150 mA, I
B
= 15 mA
at I
C
= 500 mA, I
B
= 50 mA
V
CE(sat)
-
-
0.4
0.75
V
Base Emitter Saturation Voltage
at I
C
= 150 mA, I
B
= 15 mA
at I
C
= 500 mA, I
B
= 50 mA
V
BE(sat)
0.75
-
0.95
1.2
V
Gain Bandwidth Product
at V
CE
= 10 V, I
C
= 20 mA, f = 100 MHz
f
T
250 -
MHz
Collector Output Capacitance
at V
CB
= 5 V, f = 100 MHz
C
ob
- 12 pF
Turn On Time
at V
CC
= 30 V, V
BE
= 2 V, I
C
= 150 mA, I
B1
= 15 mA
t
on
- 3 ns
Turn Off Time
at V
CC
= 30 V, I
C
= 150 mA, I
B1
= I
B2
=15 mA
t
off
- 25 ns
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