Datasheet

SPECIFICATION:
Art. Nr.
RND 1N4448WS
FEATURES:
Fast switching
Low forward voltage
Silicon Epitaxial Planar
Switching Diode
Small total capacitance
Anode
2
Top View
Simplified outline SOD-323
and symbol
1
2
PINNING
1
PIN
Cathode
DESCRIPTION
Absolute Maximum Ratings (T
a
= 25
O
C)
aramet ValueeParameter Unit
Peak Reverse Voltage V
RM
100 V
Reverse Voltage V
R
80 V
Average Rectified Forward Current I
F(AV)
150 mA
Forward Continuous Current I
FM
300 mA
Non-Repetitive Peak Forward Surge Current (at t = 1 µs) I
FSM
0.5 A
Power Dissipation P
d
200 mW
Junction Temperature T
j
150
O
C
Storage Temperature Range T
stg
- 65 to + 150
O
C
Characteristics at T
a
= 25
O
C
Parameter Min.earamet Max. Unit
Forward Voltage
at I
F
= 5 mA
at I
F
= 10 mA
at I
F
= 100 mA
at I
F
= 150 mA
V
F
0.62
-
-
-
0.72
0.855
1
1.25
V
Reverse Leakage Current
at V
R
= 80 V
at V
R
= 20 V
at V
R
= 75 V, T
J
= 150
O
C
at V
R
= 25 V, T
J
= 150
O
C
I
R
-
-
-
-
100
25
50
30
nA
nA
µA
µA
Reverse Breakdown Voltage
at I
R
= 100 µA
80 V
(BR)R
- V
Total Capacitance
at V
R
= 0.5 V, f = 1 MHz
C
tot
- 4 pF
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
rr
= 0.1 X I
R
, R
L
= 100 Ω
t
rr
-
4 ns