Datasheet

Silicon Epitaxial Planar
Switching Diode
tp
3
0.1
10
5
-
2
2
4-
5
10
2
5
0.1
v=0
0.2
0.5
5
4
1
2
5
3
4
10
I
FR
M
2
2-3-
10
2
5
10
t
p
2
5
10
-1
2
5
1
2
5
10 s
T
IFRM
t
v=tp/T
10
VR=20V
Admissible repetitive peak forward current
versus pulse duratin
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
4
3
5
100
5
2
0
1
5
2
10
100
T
j
I
200
o
C
Leakage current
versus junction temperature
2
2
5
IR
10
2
3
nA
5
10
4
T=1/fp
A
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