Datasheet

Silicon Epitaxial Planar
Switching Diode
Admissible power dissipation
versus ambient temperature
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
400
300
200
100
0
100
200
o
C
P
tot
Tamb
mW
VF
10
-1
1
10
2
10
10
3
i F
Forward characteristics
5
10
4
2
5
2
2
10
10
rf
f=1KHz
2-
10
0 V2
10
3
5
2
5
2
1
-2
10
1-
10 1 10 10
2
mA
IF
0
500
600
700
800
900
1000
0.7
0.8
0
VR
6
0 V10
1.1
1.0
0.9
C
tot(VR)
C
tot(0V)
Relative capacitance
versus reverse voltage
42 8
Dynamic forward resistance
versus forward current
Tj=25 C
o
Tj=25
o
C
Tj=100
o
C
1
f=1MHz
Tj=25 C
o
mA
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