Datasheet

SPECIFICATION:
Art. Nr.
RND 1N4148
FEATURES:
High-speed switching
DO-35 glass case
Silicon Epitaxial Planar
Switching Diode
High reliability
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter Symbol Value Unit
Peak Reverse Voltage V
RM
100 V
Reverse Voltage V
R
75 V
Average Rectified Forward Current I
F(AV)
150 mA
Surge Forward Current at t < 1 s I
FSM
500 mA
Power Dissipation P
tot
500
1)
mW
Junction Temperature T
j
200
O
C
Storage Temperature Range T
stg
- 65 to + 200
O
C
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Characteristics at T
a
= 25
O
C
Parameter Symbol Min. Max. Unit
Forward Voltage
at I
F
= 5 mA
at I
F
= 100 mA
V
F
0.62
-
0.72
1
V
Reverse Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150
O
C
I
R
I
R
I
R
-
-
-
25
5
50
nA
µA
µA
Reverse Breakdown Voltage
at I
R
= 100 µA
V
(BR)R
100
- V
Capacitance
at V
R
= 0, f = 1 MHz
C
tot
- 4 pF
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 1 mA, V
R
= 6 V, R
L
= 100 Ω
t
rr
- 4 ns
Distrelec Schweiz AG, Grabenstrasse 6, 8606 Nänikon, Switzerland, T [phone], [e-mail], distrelec.com