Datasheet

Silicon Epitaxial Planar
Switching Diode
44
Forward characteristics
Tj=100 C
I
F
(
m
A
)
10
10
-1
10
0
-2
1
VF (V)
1
Tj=25 C
10
10
2
3
2
2
n
F
5
K
~
~
~
Rectification Efficiency Measurement Circuit
6
0
V
R
F
=
2
V
V
o
I
R
(
n
A
)
Leakage current vs. junction temperature
V
R=20V
5
2
1
0
2
5
10
Tj ( C)
100
10
3
2
5
2
10
5
2
10
4
200
RevReveerrsse ce caapacpaciitatancence vvss.. re reververse voltage se voltage
0.0.99
C
C
t
t
o
o
t
t
(
(
V
V
R
R
)
)
C
C
t
t
o
o
t
t
(
(
0
0
V
V
)
)
0.70.7
00
22
0.0.88
1.1.00
1.1.11
66
VVR (V)R (V)
88
1010
Tj=Tj=225 5 C C
f=f=1M1MHHzz
25
50 75
100 125
Ambient Temperature: Ta (
O
C)
0
150
0
200
400
600
Power Dissipation: Ptot (mW)
Power Dissipation vs Ambient Temperature
500
300
100