Datasheet

SPECIFICATION:
Art. Nr.
RND 1N4148W
FEATURES:
Fast switching
Low forward voltage
Silicon Epitaxial Planar
Switching Diode
Small total capacitance
Anode
2
Top View
Simplified outline SOD-123 and
symbol
1
2
PINNING
1
PIN
Cathode
DESCRIPTION
Absolute Maximum Ratings (T
a
= 25℃)
Parameter
Valuee Unit
Peak Reverse Voltage
V
RM
100 V
Reverse Voltage
V
R
75 V
Average Rectified Forward Current
I
F(AV)
150 mA
Non-repetitive Peak Forward Surge Current at t = 1 s
at t = 1 ms
at t = 1 μs
I
FSM
0.5
1
4
A
Power Dissipation
P
tot
400 mW
Thermal Resistance from Junction to Ambient Air
R
θJA
312
℃/W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
- 65 to + 150
℃
Characteristics at T
a
= 25℃
Min.e Max. Unit
Reverse Breakdown Voltage
at I
R
= 1 µA
V
(BR)R
75 - V
Forward Voltage
at I
F
= 1 mA at I
F
= 10 mA at I
F
= 50
mA at I
F
= 150 mA
V
F
-
-
-
-
0.715
0.855
1
1.25
V
Peak Reverse Current
at V
R
= 75 V at
V
R
= 20 V
at V
R
= 75 V, T
J
= 150
℃ at V
R
= 25 V, T
J
= 150℃
I
R
-
-
-
-
1
25
50
30
µA
nA
µA
µA
Total Capacitance
at V
R
= 0 V, f = 1 MHz
C
T
- 2 pF
Reverse Recovery Time
at I
F
= 10 mA, I
rr
= 1 mA, V
R
= 6 V, R
L
= 100 Ω
t
rr
- 4 ns
Parameter