Datasheet

R01DS0041EJ0150 Rev.1.50 Page 204 of 221
Oct 18, 2013
RX210 Group 5. Electrical Characteristics
[Chip version B]
Table 5.84 E2 DataFlash Characteristics (5)
: high-speed operating mode, middle-speed operating modes 1A and 2A
Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VREFH = VREFH0 = AVCC0, VSS = AVSS0 = VREFL = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +105°C
Item Symbol
FCLK = 4 MHz FCLK = 32 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time
when N
DPEC
≤ 100 times
2 bytes t
DP2
— 0.19 4.4 — 0.13 2.0 ms
8 bytes t
DP8
— 0.24 5.1 — 0.13 2.2
Programming time
when N
DPEC
> 100 times
2 bytes t
DP2
— 0.25 6.4 — 0.17 3.0 ms
8 bytes t
DP8
— 0.32 7.5 — 0.18 3.2
Erasure time
when N
DPEC
≤ 100 times
128 bytes t
DE128
— 3.3 27.1 — 2.5 8 ms
Erasure time
when N
DPEC
> 100 times
128 bytes t
DE128
— 4.0 45.1 — 3.0 12 ms
Blank check time 2 bytes t
DBC2
——98——35μs
2 Kbytes t
DBC2K
——16——2.5ms
Suspend delay time during programming
(in programming/erasure priority mode)
t
DSPD
——0.9——0.8ms
First suspend delay time during
programming (in suspend priority mode)
t
DSPSD1
— — 220 — — 120 μs
Second suspend delay time during
programming (in suspend priority mode)
t
DSPSD2
——0.9——0.8ms
Suspend delay time during erasing
(in programming/erasure priority mode)
t
DSED
——0.9——0.8ms
First suspend delay time during erasing
(in suspend priority mode)
t
DSESD1
— — 220 — — 120 μs
Second suspend delay time during erasing
(in suspend priority mode)
t
DSESD2
——0.9——0.8ms