Datasheet

R01DS0041EJ0150 Rev.1.50 Page 201 of 221
Oct 18, 2013
RX210 Group 5. Electrical Characteristics
5.11 E2 DataFlash Characteristics
[Chip version A]
Note 1. The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 8-byte programming is performed 16 times for different
addresses in 128-byte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. This result is obtained from reliability testing.
[Chip versions B and C]
Note 1. The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 8-byte programming is performed 16 times for different
addresses in 128-byte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. This result is obtained from reliability testing.
Table 5.80 E2 DataFlash Characteristics (1)
Item Symbol Min. Typ. Max. Unit Conditions
Reprogramming/erasure cycle*
1
N
DPEC
100000 — — Times
Data hold time t
DRP
10*
2
— — Year
Table 5.81 E2 DataFlash Characteristics (2)
Item Symbol Min. Typ. Max. Unit Conditions
Reprogramming/erasure cycle*
1
N
DPEC
100000 — — Times
Data hold time After 100000
times of N
DPEC
t
DRP
30*
2
— — Year Ta = +85°C