Datasheet

R01DS0041EJ0150 Rev.1.50 Page 199 of 221
Oct 18, 2013
RX210 Group 5. Electrical Characteristics
[Chip version B]
Table 5.78 ROM (Flash Memory for Code Storage) Characteristics (5)
: middle-speed operating modes 1A and 2A
Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VREFH = VREFH0 = AVCC0, VSS = AVSS0 = VREFL = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +105°C
Item Symbol
FCLK = 4 MHz FCLK = 32 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time
when N
PEC
≤ 100 times
2 bytes t
P2
— 0.19 4.3 — 0.12 2.0 ms
8 bytes t
P8
— 0.19 4.4 — 0.12 2.0
128 bytes t
P128
— 0.67 10.7 — 0.41 4.8
Programming time
when N
PEC
> 100 times
2 bytes t
P2
— 0.23 5.3 — 0.15 2.5 ms
8 bytes t
P8
— 0.23 5.4 — 0.15 2.5
128 bytes t
P128
— 0.80 13.2 — 0.48 6.0
Erasure time
when N
PEC
≤ 100 times
2 Kbytes t
E2K
— 13.0 92.9 — 10.5 29 ms
Erasure time
when N
PEC
> 100 times
2 Kbytes t
E2K
— 15.9 176.9 — 12.8 60 ms
Suspend delay time during programming
(in programming/erasure priority mode)
t
SPD
——0.9——0.8ms
First suspend delay time during
programming (in suspend priority mode)
t
SPSD1
— — 220 — — 120 μs
Second suspend delay time during
programming (in suspend priority mode)
t
SPSD2
——0.9——0.8ms
Suspend delay time during erasing
(in programming/erasure priority mode)
t
SED
——0.9——0.8ms
First suspend delay time during erasing
(in suspend priority mode)
t
SESD1
— — 220 — — 120 μs
Second suspend delay time during erasing
(in suspend priority mode)
t
SESD2
——0.9——0.8ms
FCU reset time t
FCUR
20 μs or longer
and FCLK × 6
or greater
— — 20 μs or longer
and FCLK × 6
or greater
——μs