Datasheet

R01DS0041EJ0150 Rev.1.50 Page 197 of 221
Oct 18, 2013
RX210 Group 5. Electrical Characteristics
[Chip versions A and C]
Table 5.76 ROM (Flash Memory for Code Storage) Characteristics (3)
: high-speed operating mode, middle-speed operating mode 1A
Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VREFH = VREFH0 = AVCC0, VSS = AVSS0 = VREFL = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T
a
= –40 to +105°C
Item Symbol
FCLK = 4 MHz FCLK = 32 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time
when N
PEC
≤ 100 times
2 bytes t
P2
— 0.52 4.8 — 0.19 2.5 ms
8 bytes t
P8
— 0.52 4.9 — 0.19 2.5
128 bytes t
P128
— 1.50 10.7 — 0.57 4.8
Programming time
when N
PEC
> 100 times
2 bytes t
P2
— 0.61 5.7 — 0.23 3.0 ms
8 bytes t
P8
— 0.61 6.2 — 0.23 3.2
128 bytes t
P128
— 1.71 13.2 — 0.65 6.0
Erasure time
when N
PEC
≤ 100 times
2 Kbytes t
E2K
— 17.0 92.9 — 11.0 29 ms
Erasure time
when N
PEC
> 100 times
2 Kbytes t
E2K
— 20.8 195.8 — 13.5 60 ms
Suspend delay time during programming
(in programming/erasure priority mode)
t
SPD
——0.9——0.8ms
First suspend delay time during
programming (in suspend priority mode)
t
SPSD1
— — 220 — — 120 μs
Second suspend delay time during
programming (in suspend priority mode)
t
SPSD2
——0.9——0.8ms
Suspend delay time during erasing
(in programming/erasure priority mode)
t
SED
——0.9——0.8ms
First suspend delay time during erasing
(in suspend priority mode)
t
SESD1
— — 220 — — 120 μs
Second suspend delay time during erasing
(in suspend priority mode)
t
SESD2
——0.9——0.8ms
FCU reset time t
FCUR
20 μs or longer
and FCLK × 6
or greater
— — 20 μs or longer
and FCLK × 6
or greater
——μs