Datasheet

CHAPTER 19 ELECTRICAL SPECIFICATIONS
User’s Manual U18172EJ3V0UD
307
Flash Memory Programming Characteristics (TA = –40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply current IDD VDD = 5.5 V 7.0 mA
Erasure count
Note 1
(per 1 block)
N
ERASE TA = −40 to +85°C 1000 Times
4.5 V ≤ VDD ≤ 5.5 V 0.8 s
3.5 V ≤ VDD < 4.5 V 1.0 s
TA = −10 to +85°C,
N
ERASE ≤ 100
2.7 V ≤ V
DD < 3.5 V 1.2 s
4.5 V ≤ VDD ≤ 5.5 V 4.8 s
3.5 V ≤ VDD < 4.5 V 5.2 s
TA = −10 to +85°C,
N
ERASE ≤ 1000
2.7 V ≤ V
DD < 3.5 V 6.1 s
4.5 V ≤ VDD ≤ 5.5 V 1.6 s
3.5 V ≤ VDD < 4.5 V 1.8 s
TA = −40 to +85°C,
N
ERASE ≤ 100
2.7 V ≤ V
DD < 3.5 V 2.0 s
4.5 V ≤ VDD ≤ 5.5 V 9.1 s
3.5 V ≤ VDD < 4.5 V 10.1 s
Chip erase time TCERASE
T
A = −40 to +85°C,
N
ERASE ≤ 1000
2.7 V ≤ V
DD < 3.5 V 12.3 s
4.5 V ≤ VDD ≤ 5.5 V 0.4 s
3.5 V ≤ VDD < 4.5 V 0.5 s
TA = −10 to +85°C,
N
ERASE ≤ 100
2.7 V ≤ V
DD < 3.5 V 0.6 s
4.5 V ≤ VDD ≤ 5.5 V 2.6 s
3.5 V ≤ VDD < 4.5 V 2.8 s
TA = −10 to +85°C,
N
ERASE ≤ 1000
2.7 V ≤ V
DD < 3.5 V 3.3 s
4.5 V ≤ VDD ≤ 5.5 V 0.9 s
3.5 V ≤ VDD < 4.5 V 1.0 s
TA = −40 to +85°C,
N
ERASE ≤ 100
2.7 V ≤ V
DD < 3.5 V 1.1 s
4.5 V ≤ VDD ≤ 5.5 V 4.9 s
3.5 V ≤ VDD < 4.5 V 5.4 s
Block erase time TBERASE
T
A = −40 to +85°C,
N
ERASE ≤ 1000
2.7 V ≤ V
DD < 3.5 V 6.6 s
Byte write time TWRITE TA = −40 to +85°C, NERASE ≤ 1000 150 μ s
Per 1 block 6.8 ms Internal verify TVERIFY
Per 1 byte 27
μ s
Blank check TBLKCHK Per 1 block 480 μ s
Retention years TA = 85°C
Note 2
, NERASE ≤ 1000 10 Years
Notes 1. Depending on the erasure count (NERASE), the erase time varies. Refer to the chip erase time and block
erase time parameters.
2. When the average temperature when operating and not operating is 85°C.
Remark When a product is first written after shipment, “erase → write” and “write only” are both taken as one rewrite.