Datasheet

78K0/Ix2 CHAPTER 28 ELECTRICAL SPECIFICATIONS
R01UH0010EJ0500 Rev.5.00 715
Feb 28, 2012
28.6 Flash Memory Programming Characteristics
(T
A = 40 to +105C, 2.7 V  VDD  5.5 V, AVREF  VDD, VSS = AVSS = 0 V)
 Basic characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
VDD supply current IDD 4.5 14 mA
When a flash
memory
programmer is
used, and the self-
programming
libraries provided
by Renesas
Electronics are
used
Retention:
15 years
1000 Times
In
normal
power
mode
(RMC =
00H)
When the
EEPROM
emulation libraries
(the rewritable
ROM size is 4 KB)
provided by
Renesas
Electronics are
used
Retention:
5 years
10000 Times
Number of
rewrites per chip
C
erwr
1 erase +
1 write after
erase =
1 rewrite
Note
1
In low
power
consump
-tion
mode
(RMC =
56H)
When the self-
programming
libraries
Note 2
, and
the EEPROM
emulation libraries
(the rewritable ROM
size is 4 KB)
provided by
Renesas
Electronics are
used
Retention:
5 years
1000 Times
Operating
temperature
When a flash memory programmer is used: 10 to 40
C, during self-programming: 40 to +105 C
When a flash memory
programmer is used
2.7 to 5.5 V@8 MHz (MAX.)
In normal power mode
(RMC = 00H)
During self-programming 2.7 to 5.5 V@20 MHz (MAX.)
Operating voltage
range
In low power
consumption mode
(RMC = 56H)
During self-programming 2.7 to 5.5 V@5 MHz (MAX.)
Notes 1. When a product is first written after shipment, “erase  write” and “write only” are both taken as one rewrite.
2. Only the data area can be rewritten.