Datasheet

78K0/Kx2-L CHAPTER 28 ELECTRICAL SPECIFICATIONS
R01UH0028EJ0400 Rev.4.00 768
Sep 27, 2010
Caution The pins mounted depend on the product. Refer to Caution 2 at the beginning of this chapter.
Flash Memory Programming Characteristics
(T
A = −40 to +85°C, 2.0 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
• Basic characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
VDD supply current IDD 4.5 10.0 mA
When a flash
memory
programmer is
used, and the self-
programming
libraries provided
by Renesas
Electronics are
used
Retention:
15 years
1000 Times
In normal
power
mode
(RMC =
00H)
When the
EEPROM
emulation libraries
(the rewritable
ROM size is 4 KB)
provided by
Renesas
Electronics are
used
Retention:
5 years
10000 Times
Number of
rewrites per chip
C
erwr
1 erase +
1 write after
erase =
1 rewrite
Note 1
In low
power
consump-
tion mode
(RMC =
56H)
When the self-
programming
libraries
Note 2
, and
the EEPROM
emulation libraries
(the rewritable ROM
size is 4 KB)
provided by
Renesas
Electronics are
used
Retention:
5 years
1000 Times
Operating
temperature
When a flash memory programmer is used: 10 to 40 °C, during self-programming: −40 to +85 °C
When a flash memory
programmer is used
2.5 to 5.5 V@8 MHz (MAX.)
In normal power mode
(RMC = 00H)
During self-programming 2.5 to 5.5 V@10 MHz (MAX.)
Operating voltage
range
In low power consumption
mode (RMC = 56H)
During self-programming 2.0 to 5.5 V@5 MHz (MAX.)
Notes 1. When a product is first written after shipment, “erase → write” and “write only” are both taken as one rewrite.
2. Only the data area can be rewritten.