Datasheet

CHAPTER 27 ELECTRICAL SPECIFICATIONS (STANDARD PRODUCTS)
User’s Manual U18698EJ1V0UD
558
Standard
p
roducts
Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics (T
A = −40 to +85°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Data retention supply voltage VDDDR 1.44
Note
5.5 V
Note The value depends on the POC detection voltage. When the voltage drops, the data is retained until a POC
reset is effected, but data is not retained when a POC reset is effected.
VDD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
Data retention mode
V
DDDR
Operation mode
Flash Memory Programming Characteristics
(T
A = −40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = AVSS = 0 V)
• Basic characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
VDD supply current IDD 4.5 11.0 mA
All block Teraca 20 200 ms Erase time
Note 1
Block unit T
erasa 20 200 ms
Write time (in 8-bit units) Twrwa 10 100 μ s
Number of rewrites per chip Cerwr
Retention: 15 years
1 erase + 1 write after erase = 1 rewrite
Note 2
1000 Times
Notes 1. The prewrite time before erasure and the erase verify time (writeback time) are not included.
2. When a product is first written after shipment, “erase → write” and “write only” are both taken as one
rewrite.
Remark f
XP: Main system clock oscillation frequency