Datasheet

User’s Manual U18698EJ1V0UD
14
CHAPTER 1 OUTLINE
1.1 Features
{ Minimum instruction execution time can be changed from high speed (0.2
μ
s: @ 10 MHz operation with high-
speed system clock) to ultra low-speed (122
μ
s: @ 32.768 kHz operation with subsystem clock)
{ General-purpose register: 8 bits × 32 registers (8 bits × 8 registers × 4 banks)
{ ROM, RAM capacities
Data Memory Item
Part Number
Program Memory
(ROM)
Internal High-Speed RAM
Note
LCD Display RAM
μ
PD78F0400, 78F0410 8 KB 512 bytes
μ
PD78F0401, 78F0411 16 KB 768 bytes
μ
PD78F0402, 78F0412 24 KB
μ
PD78F0403, 78F0413
Flash
memory
Note
32 KB
1 KB
22 × 4 bits (with 4 com)
18 × 8 bits (with 8 com)
Note The internal flash memory and internal high-speed RAM capacities can be changed using the internal
memory size switching register (IMS).
{ On-chip single-power-supply flash memory
{ Self-programming (with boot swap function)
{ On-chip debug function
{ On-chip power-on-clear (POC) circuit and low-voltage detector (LVI)
{ On-chip watchdog timer (operable with internal low-speed oscillation clock)
{ LCD controller/driver (external resistance division and internal resistance division are switchable)
Segment signals: 22, Common signals: 4 (with 4com)
Segment signals: 18, Common signals: 8 (with 8com)
{ On-chip key interrupt function: 3 channels
{ On-chip buzzer output controller
{ I/O ports: 30
{ Timer: 9 channels
16-bit timer/event counter: 1 channel
8-bit timer/event counter: 3 channels
8-bit timer: 3 channels
Real-time counter (RTC): 1 channel
Watchdog timer: 1 channel
{ Serial interface: 2 channels
UART (LIN (Local Interconnect Network)-bus supported): 1 channel
UART: 1 channel
{ 10-bit successive approximation type A/D converter: 6 channels (
μ
PD78F041x only)
{ Manchester code generator
{ Power supply voltage: V
DD = 1.8 to 5.5 V
{ Operating ambient temperature: T
A = 40 to +85°C