Datasheet

V850ES/JG3-H, V850ES/JH3-H CHAPTER 33 ELECTRICAL SPECIFICATIONS
R01UH0042EJ0500 Rev.5.00 Page 1443 of 1513
Aug 12, 2011
33.9 Flash Memory Programming Characteristics
(T
A = −40 to +85°C, VDD = EVDD = UVDD = AVREF0 = AVREF1, VSS = AVSS = 0 V, CL = 50 pF)
(1) Basic characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Operating frequency fCPU 24 48 MHz
Supply voltage VDD 2.85 3.6 V
Used for updating programs
When using flash memory
programmer and Renesas
Electronics self programming
library
Retained
for
15 years
1,000 times
Number of rewrites CWRT
Used for updating data
When using Renesas
Electronics EEPROM
emulation library (usable ROM
size: 12 KB of 3 consecutive
blocks)
Retained
for
5 years
10,000 times
Programming temperature tPRG −40 +85 °C