Datasheet

V850ES/JG3-H, V850ES/JH3-H CHAPTER 31 FLASH MEMORY
R01UH0042EJ0500 Rev.5.00 Page 1356 of 1513
Aug 12, 2011
31.2 Memory Configuration
The internal flash memory area of the V850ES/JG3-H and V850ES/JH3-H is divided into 64, 96 or 128 blocks and can
be programmed/erased in block units. All the blocks can also be erased at once.
When the boot swap function is used, the physical memory located at the addresses of blocks 0 to 15 is replaced by the
physical memory located at the addresses of blocks 16 to 31. For details of the boot swap function, see 31.5 Rewriting
by Self Programming.
Figure 31-1. Flash Memory Mapping
:
:
:
PD70F3760, 70F3765,
70F3770, 70F3771
(256 KB)
μ
:
:
:
:
PD70F3762, 70F3767
(512 KB)
:
:
:
:
:
PD70F3761,70F3766
(384 KB)
μ
μ
00000000H
00000FFFH
00001000H
00001FFFH
00002000H
0000EFFFH
0000F000H
0000FFFFH
00010000H
00010FFFH
00011000H
00011FFFH
00012000H
0001EFFFH
0001F000H
0001FFFFH
00020000H
00020FFFH
00021000H
0003EFFFH
0003F000H
0003FFFFH
00040000H
00040FFFH
00041000H
0005EFFFH
0005F000H
0005FFFFH
00060000H
00060FFFH
00061000H
0007EFFFH
0007F000H
0007FFFFH
00080000H
Block 0 (4 KB)
Block 1 (4 KB)
Block 15 (4 KB)
Block 17 (4 KB)
Block 31 (4 KB)
Block 32 (4 KB)
Block 16 (4 KB)
Block 63 (4 KB)
Block 95 (4 KB)
Block 127 (4 KB)
Block 96 (4 KB)
Block 0 (4 KB)
Block 1 (4 KB)
Block 15 (4 KB)
Block 17 (4 KB)
Block 31 (4 KB)
Block 32 (4 KB)
Block 16 (4 KB)
Block 63 (4 KB)
Block 64 (4 KB)
Block 0 (4 KB)
Block 1 (4 KB)
Block 15 (4 KB)
Block 17 (4 KB)
Block 31 (4 KB)
Block 32 (4 KB)
Block 16 (4 KB)
Block 63 (4 KB)
Block 95 (4 KB)
Block 64 (4 KB)
Note 1
Note 2
Notes 1. Area to be replaced with the boot area by the boot swap function
2. Boot area