Datasheet

V850ES/JG3 APPENDIX B MAJOR DIFFERENCES BETWEEN V850ES/JG3 AND V850ES/JG2
R01UH0015EJ0300 Rev.3.00 Page 813 of 870
Sep 30, 2010
Table B-1. Major Differences Between V850ES/JG3 and V850ES/JG2 (2/2)
Major Differences V850ES/JG3 V850ES/JG2 Refer to:
Operating condition
(internal system
clock frequency)
f
XX = 2.5 to 32 MHz fXX = 2.5 to 20 MHz
Internal oscillator
characteristics
(output frequency)
220 kHz (TYP.)
(min. and max. values are the same
as those of V850ES/JG2)
200 kHz (TYP.)
DC characteristics
(supply current)
Additional parameters exist
−
Bus timing Changed parameters exist
−
CSIB timing Changed parameters exist
−
D/A converter
(output resistance)
6.42 kΩ 3.5 kΩ
LVI circuit
characteristics
(detection voltage)
2.85 to 3.05 V (2.95 V (TYP.))
2.85 to 3.15 V (3.0 V (TYP.))
Electrical
specifications
RAM retention
detection
(response time)
3.0 ms (MAX.) 2.0 ms (MAX.)
Chapter 29
Package drawing P100GC-50-UEU
S100GF-65-JBT,
S100GC-50-8EA
Chapter 30
Recommended soldering
conditions
TBD Provided
−